(a) Illustration showing an atomic force microscope (AFM) tip indenting the transition-metal dichalcogenide/polymer structure to introduce local strain. (b) Patterned single photon emission in tungsten diselenide (WSe2) induced by AFM indentation of the letters “NRL” and “AFRL”. (c) AFM indents produce single photon emitter “ornaments” on a monolayer WSe2 “Christmas tree.”
| Date Taken: | 02.14.2019 |
| Date Posted: | 02.14.2019 10:55 |
| Photo ID: | 5105671 |
| VIRIN: | 190214-N-NO204-401 |
| Resolution: | 4750x4950 |
| Size: | 1.39 MB |
| Location: | US |
| Web Views: | 31 |
| Downloads: | 5 |
This work, NRL, AFRL Develop Direct-Write Quantum Calligraphy in Monolayer Semiconductors, by Daniel Parry, identified by DVIDS, must comply with the restrictions shown on https://www.dvidshub.net/about/copyright.
