Cem Basceri, QROMIS president and CEO, displays a 200 mm diameter 650V, E-mode gallium nitride (GaN) discrete power device wafer on a QST® (QROMIS Substrate Technology) substrate. (Courtesy photo by QROMIS)
| Date Taken: | 02.06.2019 |
| Date Posted: | 06.07.2021 14:37 |
| Photo ID: | 6680418 |
| VIRIN: | 190206-N-NO204-765 |
| Resolution: | 1521x2130 |
| Size: | 1000.78 KB |
| Location: | US |
| Web Views: | 27 |
| Downloads: | 3 |
This work, gallium nitride (GaN) wafers [Image 4 of 4], by U.S. Naval Research Laboratory, identified by DVIDS, must comply with the restrictions shown on https://www.dvidshub.net/about/copyright.
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