This lab focuses on the growth of oxide semiconductor materials such as Gallium Oxide to address the need for smaller and higher power electronics. This is done by molecular beam epitaxy where a beams of atomic species are utilized to form the crystalline structure on a crystal lattice matched substrate. The work done in this lab explores and develops these material system to their fullest potential for DAF power electronic needs.
Date Taken: | 04.17.2024 |
Date Posted: | 05.07.2024 07:50 |
Photo ID: | 8380309 |
VIRIN: | 241804-F-NQ323-1002 |
Resolution: | 5776x3248 |
Size: | 9.47 MB |
Location: | US |
Web Views: | 27 |
Downloads: | 2 |
This work, Dr. Thaddeus (Tadj) Asel focuses on the growth of oxide semiconductor materials such as Gallium Oxide to address the need for smaller and higher power electronics. [Image 6 of 6], by Keith C Lewis, identified by DVIDS, must comply with the restrictions shown on https://www.dvidshub.net/about/copyright.