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The new Molecular Beam Epitaxy chamber is at the center of AFRL’s Oxide Molecular Beam Epitaxy laboratory. This highly-specialized piece of equipment enables the growth of semiconducting materials for a new breed of advanced electronics. (U.S. Air Force Photo/Adrienne Kreighbaum)
| Date Taken: | 02.04.2019 |
| Date Posted: | 04.01.2019 13:55 |
| Photo ID: | 5227145 |
| VIRIN: | 190312-F-FX606-002 |
| Resolution: | 5496x3880 |
| Size: | 3.85 MB |
| Location: | WRIGHT-PATTERSON AIR FORCE BASE, OHIO, US |
| Web Views: | 44 |
| Downloads: | 7 |
This work, New AFRL lab capability poised to change the face of high-power electronics [Image 2 of 2], by Holly H Jordan, identified by DVIDS, must comply with the restrictions shown on https://www.dvidshub.net/about/copyright.
New AFRL lab capability poised to change the face of high-power electronics
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